Specifications
| Product Type | N-Channel IGBT (Insulated Gate Bipolar Transistor) |
| Manufacturer | STMicroelectronics |
| Package / Case | TO-3P (Through Hole Mounting) |
| Collector-Emitter Voltage (Max) | 650 Volts |
| Continuous Collector Current | 40 Amperes (at 100 degrees Celsius case temperature) |
| Power Dissipation (Max) | 283 Watts (at 25 degrees Celsius case temperature) |
| Collector-Emitter Saturation Voltage | 1.6 Volts (typical) |
| Maximum Junction Temperature | 175 degrees Celsius |
| Features | Integrated anti-parallel diode for protection, minimized tail current, safe paralleling |