Specifications
Product Description
This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Transistor Polarity:P Channel
Continuous Drain Current Id:-23A
Drain Source Voltage Vds:-100V
On Resistance Rds(on):0.117ohm
Rds(on) Test Voltage Vgs:-10V
Threshold Voltage Vgs:-4V
No. of Pins:3Pins