Specifications
| Part Number | FGH80N60 (or FGH80N60FD/FD2) |
| Component Type | Insulated Gate Bipolar Transistor (IGBT) |
| Channel Type | N-Channel (Field Stop technology) |
| Package Type | TO-247-3 (Through-Hole) |
| Max Collector-Emitter Voltage | 600V |
| Max Continuous Collector Current | 80A (at 25°C case temp) |
| Max Power Dissipation | 290W (at 25°C case temp) |
| Collector-Emitter Saturation Voltage | Typically 1.8V (at 40A) |
| Manufacturer | onsemi (Fairchild Semiconductor) |