Specifications
| Manufacturer | Everlight Electronics, etc. [1.2] |
| Package Type | SOP-4 (Small Outline Package, 4-pin SMD) [1.1] |
| Input Type | DC, Gallium Arsenide (GaAs) infrared emitting diode [1.11] |
| Output Type | Silicon NPN phototransistor [1.7] |
| Isolation Voltage (Viso) | 3,750 Vrms (minimum) [1.2, 1.8] |
| Collector-Emitter Voltage (VCEO) | 80 V (maximum) [1.7] |
| Collector Current (Ic) | 50 mA (maximum) [1.7] |
| Current Transfer Ratio (CTR) | Ranges from 50% to 600% (at IF = 5 mA, VCE = 5 V) [1.8] |
| Forward Voltage (VF) | 1.2 V (typical) |
| Switching Speed | Rise Time (tr): 3 µs; Fall Time (tf): 4 µs (typical) [1.4] |
| Operating Temperature | -55°C to +110°C [1.2] |
| Compliance | Pb free and RoHS compliant [1.8] |