Specifications
Technical Details
Material:Â Semiconductor
Weight:Â 6.11 G
Dimension:Â 1 x 1 x 1 inches
Type of transistor  N-MOSFET        Â
Technology  WMOSâ„¢ FD      Â
Polarisation  unipolar             Â
Drain-source voltage 600V    Â
Drain current    53A      Â
Power dissipation  378W   Â
Case     TO247-3             Â
Gate-source voltage ±30V    Â
On-state resistance  78mΩ  Â
Mounting  THT      Â
Kind of channel enhanced