IGBT N-Channel 1250V 15A

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IGBT N-Channel 1250V 30A

80.00 MVR 80.0 MVR 80.00 MVR GST Included

74.07 MVR GST Included

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    Specifications

    Voltage (Collector-Emitter)1200 V to 1250 V (VCES)
    Current (Collector)15 A (@ T_C = 100 degrees Celsius)
    Pulsed Collector CurrentUp to 120 A (limited by junction temperature)
    Gate-Emitter VoltagePlus/Minus 20 V (VGE)
    Power Dissipation62.5 W (@ T_C = 100 degrees Celsius)
    Operating Junction Temp.-55 degrees Celsius to +150 degrees Celsius
    Package TypeTO-247 (or TO-3P/TO-3PN)
    FeaturesLow saturation voltage, minimal switching loss, integrated free-wheeling diode


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