Specifications
| Product Type | N-Channel Insulated Gate Bipolar Transistor (IGBT) |
| Manufacturer | Toshiba Semiconductor |
| Package / Case | TO-3PL (or sometimes listed as TO-264) |
| Collector-Emitter Voltage (Max) | 1500 Volts |
| Collector Current (DC) | 40 Amperes |
| Power Dissipation (Max) | 200 Watts (at 25 degrees Celsius case temperature) |
| Low Saturation Voltage | 3.7 Volts (typical at 40 Amperes) |
| Features | High-speed switching, built-in fast recovery diode (FRD) |