IXGH32N60BDI IGBT - 32A-60A 600V

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Transistor IXGH32N60BDI 32N60

80.00 MVR 80.0 MVR 80.00 MVR GST Included

74.07 MVR GST Included

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    Specifications

    Collector to Emitter Voltage Maximum600
    Continuous Collector Current at Case Temperature 25 degrees Celsius60
    Continuous Collector Current at Case Temperature 90 degrees Celsius32
    Pulsed Collector Current Maximum120
    Total Power Dissipation at Case Temperature 25 degrees Celsius200
    Collector to Emitter Saturation Voltage Typical2.1
    Operating Junction Temperature Range-55 to +150

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