G4PF50W N-Channel IGBT - 900V 28A 200W

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Transistor G4PF50W 4PF50W

100.00 MVR 100.0 MVR 100.00 MVR GST Included

92.59 MVR GST Included

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    Specifications

    Product TypeN-Channel IGBT (Insulated Gate Bipolar Transistor)
    Part NumberG4PF50W (also referred to as IRG4PF50W)
    PackageTO-247-3 (Through-Hole Mounting)
    Collector-Emitter Voltage (Max)900V
    Continuous Collector Current28A (at 100°C case temperature)
    Power Dissipation (Max)200W (at 25°C case temperature)
    Typical On-State Voltage2.25V (at 15V Gate-Emitter voltage and 28A Collector current)
    ManufacturerInfineon Technologies (formerly International Rectifier)
    ApplicationsWelding equipment, switch-mode power supplies (SMPS)

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